Measurement of Si(111) surface stress by a microscopic technique

Journal Article · Thu Dec 15 04:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.17628· OSTI ID:6799953

Twesten, R D; Gibson, J M ^[1]

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1. Department of Physics, University of Illinois, Urbana, Illinois 61801 (United States)

We have developed a method for the local measurement of surface stress using transmission electron microscopy. Applying this technique to the clean Si(111) surface during 7[times]7-1[times]1 phase coexistence, we determine the stress difference between the phases to be 30[plus minus]5 meV/A[sup 2]. This relatively small difference is consistent with the presence of adatoms in the 1[times]1 surface. The method can be easily extended to other surfaces and interfaces that have well-defined domain boundaries.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 6799953
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:23; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ADSORPTION
CRYSTAL-PHASE TRANSFORMATIONS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
EPITAXY
FREE ENERGY
MICROSCOPY
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SORPTION
STRESSES
SURFACE ENERGY
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY