Radiation damage in ion-implanted GaP and GaAs/sub 0. 6/P/sub 0. 4/

Journal Article · Fri Sep 01 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90413· OSTI ID:6796024

Rothemund, W; Fritzsche, C R

Electron-beam-absorption measurements were performed to investigate the formation and annealing of radiation damage produced by ion implantation into GaP and GaAs/sub 0.6/P/sub 0.4/. The fluence F/sub A/ required to yield an amorphous layer, the dependence of F/sub A/ on ion mass and target temperature, and the temperatures necessary for annealing were determined. For 140-keV Ar into GaAs/sub 0.6/P/sub 0.4/, we found F/sub A/=1 x 10/sup 14/ cm/sup -2/ at 273 K and F/sub A/..-->..infinity at 580 K. Our results compare well with known data for GaAs and GaP and demonstrate the applicability of the new method of measurement.

• Research Organization: Institut fuer angewandte Festkoerperphysik, Fraunhofer-Ges., D-7800 Frieburg, Federal Republic of Germany
• OSTI ID: 6796024
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL DOPING
ELECTRON BEAMS
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
ION IMPLANTATION
LAYERS
LEPTON BEAMS
MICROSCOPY
PARTICLE BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS