Light-enhanced deep deuterium emission and the diffusion mechanism in amorphous silicon

Journal Article · Sun Mar 14 23:00:00 EST 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.47.7061· OSTI ID:6795730

Branz, H M; Asher, S E; Nelson, B P ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We demonstrate that hydrogen diffusion in hydrogenated amorphous silicon ([ital a]-Si:H) is trap controlled and measure a 1.4-eV barrier for deep deuterium emission to a transport level in D-doped [ital a]-Si:H. We show that light-enhanced diffusion in [ital a]-Si:H is caused by light-enhanced detrapping of H and not by heating of the sample. From our experiments, we obtain estimates of the free-H-diffusion coefficient (3[times]10[sup [minus]8] cm[sup 2] s[sup [minus]1]), the mean H displacement between deep trapping events (250 A), and the other parameters that determine the measured H-diffusion coefficient in [ital a]-Si:H.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6795730
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 47:12; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
AMORPHOUS STATE
ATOM TRANSPORT
CHEMICAL REACTIONS
CORRELATIONS
DEUTERIUM
DIFFUSION
DOPED MATERIALS
ELEMENTS
HYDROGEN
HYDROGEN ISOTOPES
HYDROGENATION
ISOTOPES
LIGHT NUCLEI
MATERIALS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
NUCLEI
ODD-ODD NUCLEI
RADIATION TRANSPORT
SEMIMETALS
SILICON
STABLE ISOTOPES