Longitudinal-mode behaviors of mode-stabilized Al/sub x/Ga/sub 1-x/As injection lasers

Journal Article · Fri Sep 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325551· OSTI ID:6793408

Nakamura, M; Aiki, K; Ito, R; Umeda, J

Lasing spectra of a transverse-mode-stabilized AlGaAs laser of a channeled-substrate planar structure have been investigated. These lasers, which oscillate in the fundamental transverse mode, reproducibly operate in a single longitudinal mode. In addition, their linewidth is as narrow as or smaller than 30 MHz when the injection current is approx.1.2 times above threshold. The intensity distribution and excitation dependence of a nonlasing longitudinal mode have been found to be more complicated than expected from a simple theory: sizable dips have been observed in the envelope function, and nonlasing modes have been found to decrease as the injection current is increased above threshold. Furthermore, hysteresis has invariably been observed in the lasing-wavelength--vs--device-temperature (or dc current) characteristics. These behaviors are believed to reflect a slightly inhomogeneous nature of the gain spectrum because of a finite thermalization time of injected carriers, as discussed recently by Yamada and Suematsu.

• Research Organization: Central Research Laboratory, Hitachi, Ltd., Kokubunji 1-280, Tokyo 185, Japan
• OSTI ID: 6793408
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
EMISSION
EMISSION SPECTRA
ENERGY
ENERGY-LEVEL TRANSITIONS
EXCITATION
FABRICATION
JUNCTION DIODES
LASERS
OPTICAL MODES
OSCILLATION MODES
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
STABILIZATION
STIMULATED EMISSION
THRESHOLD ENERGY