Model for ion-implantation-induced improvements of photoferroelectric imaging in lead lanthanum zirconate titanate ceramics
Studies of photoferroelectric image storage in H-, He-, and, more recently, Ar-implanted /(PLZT) lead lanthanum zirconate titanate reveal that the photosensitivity can be significantly increased by ion implantation into the image storage surface. For example, the photosensitivity after implantation with 5 x 10/sup 14/ 500-keV Ar/cm/sup 2/ is increased by about three orders of magnitude over that of unimplanted PLZT. The increase in photosensitivity results from a decrease in dark conductivity and changes in the photoconductivity of the implanted layer. We present a phenomenological model which describes the photosensitivity enhancement obtained by ion implantation. This model takes into account both light- and ion- implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with near-UV light intensity for ion-implantated PLZT.
- Research Organization:
- Sandia National Laboratories, Alberquerque, New Mexico, 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6791617
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:9; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
CERAMICS
COMPARATIVE EVALUATIONS
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
FERROELECTRIC MATERIALS
INFORMATION
ION IMPLANTATION
LANTHANUM COMPOUNDS
LEAD COMPOUNDS
MATHEMATICAL MODELS
NUMERICAL DATA
OXYGEN COMPOUNDS
PHOTOELECTRIC EFFECT
PHYSICAL PROPERTIES
RADIATIONS
RARE EARTH COMPOUNDS
SENSITIVITY
THEORETICAL DATA
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ULTRAVIOLET RADIATION
ZIRCONATES
ZIRCONIUM COMPOUNDS