Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Effects of ion implantation on the photoferroelectric properties of lead lanthanum zirconate titanate ceramics

Conference ·
OSTI ID:6270362
Earlier studies of Ar-, Ar + Ne- and Ar + Ne + He- implanted ferroelectric-phase lead lanthanum zirconate titanate (PLZT) ceramics indicate that ion implantation can increase the intrinsic (near-uv) photoferroelectric sensitivity by more than four orders of magnitude compared to that of unimplanted PLZT. More recent studies involving implantation of chemically active ions, e.g., Al and Cr, indicate that the absorption spectrum of the implanted region can be extended from the near-uv to the visible, and that the extrinsic (visible-light) photoferroelectric sensitivity can be improved substantially with respect to that of PLZT implanted with inert ions. The results of these studies are reviewed and photographic sensitivities of Ar-, Ar + Ne-, Ar + Ne + He-, Al-, Cr-, Fe-, and Fe + Ne- implanted PLZT at both near-uv and visible-light wavelengths are compared with the sensitivities of other image storage media.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6270362
Report Number(s):
SAND-81-1834C; CONF-810863-1; ON: DE81028386
Country of Publication:
United States
Language:
English