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Title: Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K

Abstract

The present paper reports the results of a study of annealing of n-type germanium doped with P, As, Sb, and Bi in concentrations from 2 x 10/sup 14/ to 2 x 10/sup 16/ cm/sup -3/ and irradiated with fast electrons (2.5 and 4.5 MeV) at 77 /sup 0/K. The annealing stage stage near 220 /sup 0/K and the fraction of the carrier density reovered at this stage are independent of the nature and concentration of the donor impurity, indicating that the defects annealed at this stage do not include such impurities. These defects are of nonpoint nature and of pure radiation origin, and they represent one quarter of all the defects created in germanium by irradiation at T=77 /sup 0/K.

Authors:
; ; ;
Publication Date:
Research Org.:
A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad
OSTI Identifier:
6783290
Resource Type:
Journal Article
Journal Name:
Sov. Phys. - Semicond. (Engl. Transl.); (United States)
Additional Journal Information:
Journal Volume: 12:7
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM; PHYSICAL RADIATION EFFECTS; ANNEALING; CARRIER DENSITY; CRYSTAL DEFECTS; ELECTRONS; IMPURITIES; LOW TEMPERATURE; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HEAT TREATMENTS; LEPTONS; METALS; RADIATION EFFECTS; 360105* - Metals & Alloys- Corrosion & Erosion

Citation Formats

Gerasimov, A B, Gogotishvili, M K, Dolidze, N D, and Konovalenko, B M. Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K. United States: N. p., 1978. Web.
Gerasimov, A B, Gogotishvili, M K, Dolidze, N D, & Konovalenko, B M. Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K. United States.
Gerasimov, A B, Gogotishvili, M K, Dolidze, N D, and Konovalenko, B M. Sat . "Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K". United States.
@article{osti_6783290,
title = {Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K},
author = {Gerasimov, A B and Gogotishvili, M K and Dolidze, N D and Konovalenko, B M},
abstractNote = {The present paper reports the results of a study of annealing of n-type germanium doped with P, As, Sb, and Bi in concentrations from 2 x 10/sup 14/ to 2 x 10/sup 16/ cm/sup -3/ and irradiated with fast electrons (2.5 and 4.5 MeV) at 77 /sup 0/K. The annealing stage stage near 220 /sup 0/K and the fraction of the carrier density reovered at this stage are independent of the nature and concentration of the donor impurity, indicating that the defects annealed at this stage do not include such impurities. These defects are of nonpoint nature and of pure radiation origin, and they represent one quarter of all the defects created in germanium by irradiation at T=77 /sup 0/K.},
doi = {},
journal = {Sov. Phys. - Semicond. (Engl. Transl.); (United States)},
number = ,
volume = 12:7,
place = {United States},
year = {1978},
month = {7}
}