Changes in radiation defects caused by annealing at 220 /sup 0/K of germanium irradiated with fast electrons at 77 /sup 0/K

Journal Article · Sat Jul 01 00:00:00 EDT 1978 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6783290

Gerasimov, A B; Gogotishvili, M K; Dolidze, N D; Konovalenko, B M

The present paper reports the results of a study of annealing of n-type germanium doped with P, As, Sb, and Bi in concentrations from 2 x 10/sup 14/ to 2 x 10/sup 16/ cm/sup -3/ and irradiated with fast electrons (2.5 and 4.5 MeV) at 77 /sup 0/K. The annealing stage stage near 220 /sup 0/K and the fraction of the carrier density reovered at this stage are independent of the nature and concentration of the donor impurity, indicating that the defects annealed at this stage do not include such impurities. These defects are of nonpoint nature and of pure radiation origin, and they represent one quarter of all the defects created in germanium by irradiation at T=77 /sup 0/K.

• Research Organization: A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad
• OSTI ID: 6783290
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 12:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
PHYSICAL RADIATION EFFECTS
ANNEALING
CARRIER DENSITY
CRYSTAL DEFECTS
ELECTRONS
IMPURITIES
LOW TEMPERATURE
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HEAT TREATMENTS
LEPTONS
METALS
RADIATION EFFECTS
360105* - Metals & Alloys- Corrosion & Erosion