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U.S. Department of Energy
Office of Scientific and Technical Information

Study of reactive plasma deposited thin films. Semiannual progress report

Technical Report ·
OSTI ID:6775638
A state-of-the-art research laboratory was established to grow and characterize amorphous thin films that are useful in semi-conductor devices. Two film systems, nitride films and silicon dioxide films were studied. Over seventy deposition runs for nitride films were made. The films were deposited on silicon substrate using plasma enhanced chemical vapor deposition. It was found that the uniformity of the films were affected by the location of the film on the platen.
Research Organization:
North Carolina Agricultural and Technical State Univ., Greensboro (USA)
OSTI ID:
6775638
Report Number(s):
N-87-14167; NASA-CR-179834; NAS-1.26:179834
Country of Publication:
United States
Language:
English

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