X-ray of diffraction and electrophysical investigation T1/sub 2/InPrTe/sub 4/
Journal Article
·
· Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6774819
(ILLEGIBLE) we investigated the temperature dependences of the electrical conductivity sigma, Hall effect R, thermo-emf ..cap alpha.., and the coefficient of linear thermal expansion (CTE) of the compound Tl/sub 2/InPrTe/sub 4/. The errors in the measurements of sigma, R, ..cap alpha.., and CTE were 4, 7, 3, and 0.5%, respectively. The electrical conductivity of Tl/sub 2/InPrTe/sub 4/ at 300-630 /sup 0/K decreases (Fig. 1a), which is similar to the electrical conductivity of metals. In this range the carrier concentration does not depend upon temperature and the mobility is limited principally by scattering by the lattice. Consequently, the mobility and electrical conductivity of the above phase decrease. On the whole, variation of the Hall coefficient agrees well with the temperature dependence of the electrical conductivity of the compound Tl/sub 2/InPrTe/sub 4/. At intrinsic conductivity (from 848 /sup 0/K) Hall coefficient decreases, whereas the intrinsic-carrier concentration and electrical conductivity increase.
- Research Organization:
- Sumgiat Higher Technical College
- OSTI ID:
- 6774819
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:6; ISSN INOMA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrophysical properties of (CdSe)/sub x/(Cu/sub 2/Ge(Sn)Se/sub 3/)/sub 1-x/
Electrophysical properties of n-Cd /SUB x/ Hg /SUB 1-x/ Te (0. 54 X 0. 92) single crystals
Electrophysical properties of Cu/sub 2/A/sup II/B/sup IV/Se/sub 4/ (A/sup II/ - Cd, Hg; B/sup IV/ - Ge, Sn) compounds
Journal Article
·
Thu Oct 01 00:00:00 EDT 1987
· Inorg. Mater. (Engl. Transl.); (United States)
·
OSTI ID:5253344
Electrophysical properties of n-Cd /SUB x/ Hg /SUB 1-x/ Te (0. 54 X 0. 92) single crystals
Journal Article
·
Sat Jun 01 00:00:00 EDT 1985
· Inorg. Mater. (Engl. Transl.); (United States)
·
OSTI ID:6271729
Electrophysical properties of Cu/sub 2/A/sup II/B/sup IV/Se/sub 4/ (A/sup II/ - Cd, Hg; B/sup IV/ - Ge, Sn) compounds
Journal Article
·
Wed Nov 30 23:00:00 EST 1988
· Inorg. Mater. (Engl. Transl.); (United States)
·
OSTI ID:6010414
Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMOTIVE FORCE
EXPANSION
HALL EFFECT
INDIUM COMPOUNDS
INDIUM TELLURIDES
LATTICE PARAMETERS
MOBILITY
PHYSICAL PROPERTIES
PRASEODYMIUM COMPOUNDS
PRASEODYMIUM TELLURIDES
RARE EARTH COMPOUNDS
SCATTERING
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TETRAGONAL LATTICES
THALLIUM COMPOUNDS
THALLIUM TELLURIDES
THERMAL EXPANSION
THERMOELECTRIC PROPERTIES
X-RAY DIFFRACTION
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMOTIVE FORCE
EXPANSION
HALL EFFECT
INDIUM COMPOUNDS
INDIUM TELLURIDES
LATTICE PARAMETERS
MOBILITY
PHYSICAL PROPERTIES
PRASEODYMIUM COMPOUNDS
PRASEODYMIUM TELLURIDES
RARE EARTH COMPOUNDS
SCATTERING
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TETRAGONAL LATTICES
THALLIUM COMPOUNDS
THALLIUM TELLURIDES
THERMAL EXPANSION
THERMOELECTRIC PROPERTIES
X-RAY DIFFRACTION