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Electrophysical properties of Cu/sub 2/A/sup II/B/sup IV/Se/sub 4/ (A/sup II/ - Cd, Hg; B/sup IV/ - Ge, Sn) compounds

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6010414
The temperature dependence of the intrinsic electrical conductivity, Hall constant, thermo-emf coefficient, and charge carrier Hall coefficient in Cu/sub 2/A/sup II/B/sup IV/Se/sub 4/ (A/sup II/ - Cd, Hg; B/sup IV/ - Ge, Sn) were investigated in the range 150-950 K. Values were obtained for the thermal forbidden-band width, microhardness, pycnometric density, and unit-cell parameters.
OSTI ID:
6010414
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 24:7; ISSN INOMA
Country of Publication:
United States
Language:
English