X-ray photoelectron spectroscopy study of Schottky barrier formation and thermal stability of the LaB/sub 6//GaAs(001) c (4 x 4) interface

Journal Article · Mon Mar 09 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98090· OSTI ID:6774519

Yokotsuka, T; Narusawa, T; Uchida, Y; Nakashima, H

Schottky barrier formation and thermal stability of the LaB/sub 6//GaAs(001) c (4 x 4) interface were investigated by x-ray photoelectron spectroscopy. Results show an excellent thermal stability without any appreciable interface reactions such as interdiffusion. Band bending induced by LaB/sub 6/ deposition is found to depend on the evaporation condition. However, the Fermi level pinning position does not change due to heat treatments between 300 and 700 /sup 0/C. This indicates that LaB/sub 6/ is a promising gate material for GaAs integrated circuits.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 6774519
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 50:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
GALLIUM ARSENIDES
INTERFACES
LANTHANUM BORIDES
SCHOTTKY BARRIER DIODES
FABRICATION
MATERIALS
STABILITY
FERMI LEVEL
FIELD EFFECT TRANSISTORS
INTEGRATED CIRCUITS
PHOTOELECTRON SPECTROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
BORIDES
BORON COMPOUNDS
ELECTRON SPECTROSCOPY
ELECTRONIC CIRCUITS
ENERGY LEVELS
GALLIUM COMPOUNDS
LANTHANUM COMPOUNDS
MICROELECTRONIC CIRCUITS
PNICTIDES
RARE EARTH COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
TRANSISTORS
360603* - Materials- Properties
420800 - Engineering- Electronic Circuits & Devices- (-1989)