Preparation of porous film of copper molybdenum sulfide by a solid-gas reaction
Journal Article
·
· J. Electrochem. Soc.; (United States)
Chevrel phases of the type M/sub x/Mo/sub 6/S/sub 8-9/ (M = metal ion) are an important class of compounds because of their interesting structural, superconducting, and magnetic properties. Attempts are also being made to exploit the possibilities of their use as electrode material. Some investigators used bulk specimen or pellets of one of the Chevrel phases, copper molybdenum sulfides (CMS), as a rechargeable cathode material for lithium secondary batteries. A porous thin film of CMS would be suitable as an electrode in developing a high energy compact secondary battery. CMS thin films are usually prepared by a dc getter sputtering method or by an evaporation technique. However, films produced by any of these methods often contain an impurity phase other than the pure CMS phase. A new technique of preparing porous and coherent thin films of CMS on Cu/sub 2/S has been developed. The preparation technique and the properties of the film, along with the results of incorporation of Li/sup -/ ion into this film, are presented in this paper.
- Research Organization:
- Dept. of Chemical Engineering, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152
- OSTI ID:
- 6769785
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 133:10; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Lithium/molybdenum oxysulfide secondary batteries
Critical currents and scaling laws in sputtered copper molybdenum sulfide
Molybdenum as a contact material in zinc tin oxide thin film transistors
Journal Article
·
Tue Jan 31 23:00:00 EST 1989
· J. Electrochem. Soc.; (United States)
·
OSTI ID:6200479
Critical currents and scaling laws in sputtered copper molybdenum sulfide
Journal Article
·
Tue Feb 28 23:00:00 EST 1978
· J. Low Temp. Phys.; (United States)
·
OSTI ID:7096355
Molybdenum as a contact material in zinc tin oxide thin film transistors
Journal Article
·
Mon May 12 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22273417
Related Subjects
25 ENERGY STORAGE
250903* -- Energy Storage-- Batteries-- Materials
Components
& Auxiliaries
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALKALI METALS
CHALCOGENIDES
CHEMICAL PREPARATION
COPPER COMPOUNDS
COPPER SULFIDES
ELECTRIC BATTERIES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROCHEMICAL CELLS
ELECTRODES
ELEMENTS
FILMS
LITHIUM
MAGNETIC PROPERTIES
MATERIALS
METALS
MOLYBDENUM COMPOUNDS
MOLYBDENUM SULFIDES
PHYSICAL PROPERTIES
POROSITY
REFRACTORY METAL COMPOUNDS
SPUTTERING
SULFIDES
SULFUR COMPOUNDS
SUPERCONDUCTIVITY
SYNTHESIS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
250903* -- Energy Storage-- Batteries-- Materials
Components
& Auxiliaries
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALKALI METALS
CHALCOGENIDES
CHEMICAL PREPARATION
COPPER COMPOUNDS
COPPER SULFIDES
ELECTRIC BATTERIES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROCHEMICAL CELLS
ELECTRODES
ELEMENTS
FILMS
LITHIUM
MAGNETIC PROPERTIES
MATERIALS
METALS
MOLYBDENUM COMPOUNDS
MOLYBDENUM SULFIDES
PHYSICAL PROPERTIES
POROSITY
REFRACTORY METAL COMPOUNDS
SPUTTERING
SULFIDES
SULFUR COMPOUNDS
SUPERCONDUCTIVITY
SYNTHESIS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS