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U.S. Department of Energy
Office of Scientific and Technical Information

HTS SNS devices on large-area substrates by single-source MOCVD. Final report, 4 June 1993-28 February 1994

Technical Report ·
OSTI ID:6766194
A novel, single-source metalorganic chemical vapor deposition (SSMOCVD) technique has shown exceptional promise for the growth of epitaxial oxide films and multilayers on large area substrates, as needed for the commercial-scale production of high temperature superconductor devices and circuits. In this contract the SSMOCVD technique was applied to growth of YBa2Cu307-x and CaRuO3 films and multilayers for the fabrication of superconductor-normal-superconductor Josephson junctions. A process was developed for the growth of epitaxial CaRuO3 films by SSMOCVD, which was the first reported growth of CaRuO3 by MOCVD. Also, a process was developed for the in situ growth of epitaxial YBa2Cu307-x/CaRuO3 multilayers by SSMOCVD. Finally, epitaxial SNS edge junctions were fabricated and tested which used a top YBCO/CaRuo3 bilayer grown in situ by SSMOCVD and a base SrTiO3/YBa2Cu3O7-x bilayer grown in situ by pulsed laser ablation.
Research Organization:
Conductus, Inc., Sunnyvale, CA (United States)
OSTI ID:
6766194
Report Number(s):
AD-A-285159/0/XAB; CNN: DASG60-93-C-0118
Country of Publication:
United States
Language:
English