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U.S. Department of Energy
Office of Scientific and Technical Information

Back barrier heteroface AlGaAs solar cell

Patent ·
OSTI ID:6763490
This is an improvement to the AlGaAs/GaAs heteroface solar cell in that the photovoltaically active region is composed of AlGaAs of low Al composition (approximately 2% to 10%) and is bounded by the usual high Al content (approximately 90% or more) AlGaAs window on the cell top and a novel high Al content (more than about 90%) back barrier. The back barrier serves to significantly reduce minority carrier losses in the rear region by blocking the carriers from reaching the cell substrate region. The result is that both light generated current and cell voltage performance will be improved.
Assignee:
Secretary of the Air Force
Patent Number(s):
US 4427841
OSTI ID:
6763490
Country of Publication:
United States
Language:
English