Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

Patent · Sun Mar 13 00:00:00 EST 1983

OSTI ID:6763361

Hogan, S J

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

• DOE Contract Number: AC02-77CH00178
• Assignee: Dept. of Energy
• Application Number: ON: DE84014515
• OSTI ID: 6763361
• Resource Relation: Other Information: Portions are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
ELECTRIC CONTACTS
SILVER
DEPOSITION
ANNEALING
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
MATERIALS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
TRANSITION ELEMENTS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360101 - Metals & Alloys- Preparation & Fabrication