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Title: Pure silver ohmic contacts to N- and P- type gallium arsenide materials

Abstract

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

Inventors:
 [1]
  1. (Golden, CO)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
865741
Patent Number(s):
US 4564720
Assignee:
United States of America as represented by United States (Washington, DC) NREL
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
pure; silver; ohmic; contacts; n-; p-; type; gallium; arsenide; materials; disclosed; improved; process; manufacturing; semiconductor; devices; components; n-type; substrate; layer; p-type; diffused; comprises; forming; contact; substantially; doping; carrier; concentration; substrate layer; p-type gallium; comprises forming; layer comprises; improved process; process comprises; semiconductor device; ohmic contact; semiconductor devices; gallium arsenide; ohmic contacts; n-type layer; n-type gallium; p- type; type gallium; /136/148/257/438/

Citation Formats

Hogan, Stephen J. Pure silver ohmic contacts to N- and P- type gallium arsenide materials. United States: N. p., 1986. Web.
Hogan, Stephen J. Pure silver ohmic contacts to N- and P- type gallium arsenide materials. United States.
Hogan, Stephen J. Wed . "Pure silver ohmic contacts to N- and P- type gallium arsenide materials". United States. https://www.osti.gov/servlets/purl/865741.
@article{osti_865741,
title = {Pure silver ohmic contacts to N- and P- type gallium arsenide materials},
author = {Hogan, Stephen J.},
abstractNote = {Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Patent:

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