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On the angular dependence of proton induced events and charge collection

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6762593
; ; ; ;  [1]; ; ;  [2]
  1. Soreq NRC, Yavne (Israel)
  2. Paul Scherrer Inst., Villigen (Switzerland)

Protons from the radiation belts penetrate low altitude orbiting satellites from all directions. To evaluate the damage they cause to on-board electronic devices it is necessary to know the angular dependence of proton-induced events, in order to calculate the average cross section of phenomena like single event upset (SEU) and single event latchup. Here, careful measurements of the angular dependence of proton induced SEU and SEL in HM65162 SRAMs and of energy deposited by protons in thin surface barrier detectors are reported. The authors found a very weak anisotropy whose behavior is described by their model.

OSTI ID:
6762593
Report Number(s):
CONF-940726--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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