Memory device using movement of protons
An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia National Labs., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,830,575/A/
- Application Number:
- PAN: 8-714,547
- OSTI ID:
- 675846
- Resource Relation:
- Other Information: PBD: 3 Nov 1998
- Country of Publication:
- United States
- Language:
- English
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Memory device using movement of protons
Memory device using movement of protons