X-ray diffraction and excitation photoluminescence analysis of ordered GaInP

Journal Article · Tue Dec 01 04:00:00 EST 1998 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.58.15355· OSTI ID:675115

Forrest, R L; Golding, T D; Moss, S C ^[1]; Zhang, Z; Geisz, J F; Olson, J M; Mascarenhas, A ^[2]; Ernst, P; Geng, C ^[3]

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1. Physics Department, University of Houston, Houston, Texas 77204-5506 (United States)
2. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
3. 4 Physics Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550, Stuttgart (Germany)

X-ray diffraction is shown to provide a direct, quantitative, structural measurement of the degree of spontaneous ordering in GaInP. In this paper we combine x-ray diffraction and excitation photoluminescence analyses of CuPt-ordered GaInP, and comparing the results to theoretical predictions for the dependence of the band structure on order parameter, determine the values of the band-gap reduction and crystal-field splitting parameters for the perfectly ordered alloy. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 675115
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 58; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
CRYSTAL FIELD
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ORDER PARAMETERS
PHOTOLUMINESCENCE
STRUCTURAL CHEMICAL ANALYSIS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION