Low-energy electron diffraction intensity analysis of the atomic geometry of p (1 times 1) monolayers of bismuth on GaAs(110)

Journal Article · Sun Jul 01 04:00:00 EDT 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576523· OSTI ID:6736964

Duke, C B; Lessor, D L ^[1]; Guo, T; Ford, W K ^[2]

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1. Pacific Northwest Laboratory, Richland, Washington 99352 (USA)
2. Montana State University, Bozeman, MT (USA). Advanced Materials Center Montana State University, Bozeman, MT (USA). Department of Physics

The elastic low-energy electron diffraction intensities of 18 diffracted beams associated with electrons normally incident on GaAs(110)-{ital p}(1{times}1)--Bi(1 ML) (monolayer) have been measured at 130 K. Analysis of these beams using a multiple scattering methodology previously applied to GaAs(110) and GaAs(110)-{ital p}(1{times}1)--Sb(1 ML) yields a best-fit structure characterized by a bond-length-conserving top layer rotation of chains of Bi atoms by a tilt angle of {omega}{sub 1} =3{degree}{plus minus}2{degree} and a counter rotation (Ga displaced outward toward the Bi overlayer) in the underlying GaAs(110) layer of {omega}{sub 2}={minus}3{degree}{plus minus}2{degree}. A small contraction of the top-layer spacing is possible but is not mandated by the analysis. Only geometries analogous to that of GaAs(110)-{ital p}(1{times}1)--Sb(1 ML) were included in the structural search.

• DOE Contract Number: AC06-76RL01830
• OSTI ID: 6736964
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:4; ISSN JVTAD; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
APPLE COMPUTERS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
BISMUTH
BONDING
COHERENT SCATTERING
COMPUTERS
DEPOSITION
DIFFRACTION
ELECTRON BEAMS
ELECTRON DIFFRACTION
ELECTRONIC CIRCUITS
ELECTRONIC STRUCTURE
ELEMENTS
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JOINING
LEPTON BEAMS
LOW TEMPERATURE
METALS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
PARTICLE BEAMS
PNICTIDES
SCATTERING
SURFACE COATING
SURFACE PROPERTIES
THIN FILMS