Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1/times/1)Bi

Journal Article · Thu Jun 15 00:00:00 EDT 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.12925· OSTI ID:6257520

McLean, A B; Feenstra, R M; Taleb-Ibrahimi, A; Ludeke, R

We report the structural and electronic properties of a new orderedBi(1/times/1) overlayer on cleaved GaAs(110) surfaces. Although somestructural similarities exist between the ordered Bi monolayer and that for Sb,our studies show the following novel features: a periodic one-dimensional arrayof misfit dislocations, which appear to generate acceptor states that ''pin''the Fermi level on /ital n/-type GaAs, and Bi-derived valence and conductionbands that extend into the GaAs band gap and are separated by 0.7 eV.

• Research Organization: IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598(US)
• OSTI ID: 6257520
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:17; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BISMUTH
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY LEVELS
EPITAXY
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LINE DEFECTS
METALS
MICROSCOPY
ORDER PARAMETERS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES