Magnetotransport through an antidot lattice in GaAs-Al sub x Ga sub 1 minus x As heterostructures

Journal Article · Fri Jun 15 00:00:00 EDT 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.12307· OSTI ID:6735575

Ensslin, K; Petroff, P M ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106 (USA)

Regular two-dimensional arrays of antidots with periodicities in the range of 200--500 nm are prepared in GaAs-Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As heterostructures by means of Ga-focused ion-beam implantation. Transport measurements at low magnetic fields reveal a strong negative magnetoresistance originating from the localization of the electrons in the potential valleys between antidots. The low-temperature mobilities of the carriers deduced from the {ital B}=0 resistance are in the range of 1000--30 000 cm{sup 2}/V s. Under illumination mobility changes by more than a factor of 20 can be achieved. For high magnetic fields well-defined Shubnikov--de Haas oscillations and quantum Hall plateaus are observed. Close to {ital B}=0 a very small structure in the magnetoresistance occurs reflecting the commensurability of the cyclotron diameter and the periodicity of the antidot array.

• OSTI ID: 6735575
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:17; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
MAGNETIC FIELDS
MAGNETORESISTANCE
PHYSICAL PROPERTIES
PNICTIDES
SHUBNIKOV-DE HAAS EFFECT
SUPERLATTICES