Evidence for spin splitting in In/sub x/Ga/sub 1-//sub x/As/In/sub 0. 52/Al/sub 0. 48/As heterostructures as B. -->. 0
The splitting in zero magnetic field between the up- and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different In/sub x/Ga/sub 1-//sub x/As/In/sub 0.52/Al/sub 0.48/As modulation-doped heterostructures with high electron densities (n/sub s/approx.(1.5--1.8) x 10/sup 12/ cm/sup -2/). We have observed a characteristic beating modulation in the amplitude of the Shubnikov--de Haas oscillations in this system and up to six nodes have been measured in the Shubnikov--de Haas data for magnetic fields in the range 0.15T..0 is deduced from the data. For magnetic fields applied at an angle theta to the interface, the beat positions scale as costheta for small angles but increase steeply after a critical angle.
- Research Organization:
- School of Electrical Engineering, Department of Physics, Purdue University, West Lafayette, Indiana 47907
- OSTI ID:
- 6551013
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:2; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures
Two-dimensional electron gas in a modulation-doped SrTiO{sub 3}/Sr(Ti, Zr)O{sub 3} heterostructure
Related Subjects
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
FREQUENCY ANALYSIS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
MATERIALS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SHUBNIKOV-DE HAAS EFFECT
SPIN FLIP