Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent

Patent · Tue Sep 14 00:00:00 EDT 1982

OSTI ID:6733635

Lundberg, L B

A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material is described. Reasonable growth rates are accomplished at temperatures in the range of about 1330 to about 1500/sup 0/C.

• Assignee: Department Of Energy
• Patent Number(s): US 4349407
• OSTI ID: 6733635
• Resource Relation: Patent File Date: Filed date 9 May 1979; Other Information: PAT-APPL-037247
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EVAPORATION
LIQUID METALS
LITHIUM
MELTING
PRECIPITATION
SEALING MATERIALS
SEMICONDUCTOR MATERIALS
SOLVENTS
TEMPERATURE EFFECTS
ALKALI METALS
CARBIDES
CARBON COMPOUNDS
ELEMENTS
FLUIDS
LIQUIDS
MATERIALS
METALS
PHASE TRANSFORMATIONS
SEPARATION PROCESSES
SILICON COMPOUNDS
360602* - Other Materials- Structure & Phase Studies