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Title: Method of forming single crystals of beta silicon carbide

Abstract

A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330/sup 0/C or about 1500/sup 0/C.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
5484181
Patent Number(s):
4,349,407
Application Number:
06/037,247
Assignee:
The United States of America as represented by the United States (Washington, DC)
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LITHIUM; SOLVENTS; SILICON CARBIDES; CRYSTAL GROWTH; LIQUID METALS; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; VERY HIGH TEMPERATURE; ALKALI METALS; CARBIDES; CARBON COMPOUNDS; CRYSTALS; ELEMENTS; FLUIDS; LIQUIDS; MATERIALS; METALS; SILICON COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Lundberg, L B. Method of forming single crystals of beta silicon carbide. United States: N. p., 1982. Web.
Lundberg, L B. Method of forming single crystals of beta silicon carbide. United States.
Lundberg, L B. Tue . "Method of forming single crystals of beta silicon carbide". United States. https://www.osti.gov/servlets/purl/5484181.
@article{osti_5484181,
title = {Method of forming single crystals of beta silicon carbide},
author = {Lundberg, L B},
abstractNote = {A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330/sup 0/C or about 1500/sup 0/C.},
doi = {},
url = {https://www.osti.gov/biblio/5484181}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {9}
}

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