Semiconductor laser theory with many-body effects

Technical Report · Wed Feb 15 04:00:00 EST 1989

OSTI ID:6733590

Haug, H; Gayg, G; Koch, S W

A description of the electron-hole plasma of a semiconductor laser is developed that includes the many-body effects due to the Coulomb interactions. In particular, the plasma density-dependent band-gap renormalization, the broadening due to intraband scattering, and the Coulomb enhancement are included and evaluated for three- and two-dimensional semiconductor structures. Because of the short intraband scattering relaxation time one can eliminate the interband polarization adiabatically and at the same time introduce a hydrodynamic description of the interband kinetics. From this general formulation a diffusion equation for the carrier density is derived. The resulting ambipolar diffusion coefficient decreases with the laser intensity due to the reduction of the electron drift. The present semiclassical theory is completed by the laser field equations and by the addition of Langevin fluctuations.

• Research Organization: Arizona Univ., Tucson, AZ (USA). Optical Sciences Center
• OSTI ID: 6733590
• Report Number(s): AD-A-220276/0/XAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
DENSITY
DIFFUSION
ELECTRON GAS
ENERGY GAP
EQUATIONS
FLUID MECHANICS
FLUIDS
GASES
HOLES
HYDRODYNAMICS
LANGEVIN EQUATION
LASERS
MANY-BODY PROBLEM
MATERIALS
MECHANICS
PHYSICAL PROPERTIES
PLASMA
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
SOLID-STATE PLASMA
TWO-DIMENSIONAL CALCULATIONS