Semiconductor laser theory with many-body effects
A description of the electron-hole plasma of a semiconductor laser is developed that includes the many-body effects due to the Coulomb interactions. In particular, the plasma density-dependent band-gap renormalization, the broadening due to intraband scattering, and the Coulomb enhancement are included and evaluated for three- and two-dimensional semiconductor structures. Because of the short intraband scattering relaxation time one can eliminate the interband polarization adiabatically and at the same time introduce a hydrodynamic description of the intraband kinetics. From this general formulation a diffusion equation for the carrier density is derived. The resulting ambipolar diffusion coefficient decreases with the laser intensity due to the reduction of the electron drift. The present semiclassical theory is completed by the laser field equation and by the addition of Langevin fluctuations.
- Research Organization:
- Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
- OSTI ID:
- 6547104
- Journal Information:
- Phys. Rev. A; (United States), Journal Name: Phys. Rev. A; (United States) Vol. 39:4; ISSN PLRAA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Many-body effects in the gain and refractive index of an active semiconductor medium
Nonequilibrium and many-body Coulomb effects in the relaxation oscillation of a semiconductor laser
Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
BASIC INTERACTIONS
CARRIER DENSITY
COULOMB SCATTERING
ELASTIC SCATTERING
ELECTROMAGNETIC INTERACTIONS
ELECTRON-HOLE DROPLETS
ENERGY GAP
INTERACTIONS
LASERS
MANY-BODY PROBLEM
PLASMA
PLASMA SIMULATION
RENORMALIZATION
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIMULATION
SOLID-STATE PLASMA