Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects [ital B][sub 71][sup 1] (1. 1377 eV) in silicon

Journal Article · Thu Sep 15 00:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.7338· OSTI ID:6733339

Kaminskii, A S; Lavrov, E V ^[1]; Karasyuk, V A; Thewalt, M L.W. ^[2]

---

1. Institute of Radioengineering and Electronics, Russian Academy of Sciences, 11 Mohovaya Street, Moscow, 103907 (Russian Federation)
2. Department of Physics, Simon Fraser University, Burnaby, British Columbia, V5A 1S6 (Canada)

Photoluminescence (PL) spectra of excitons bound to the isoelectronic defects [ital B][sub 71][sup 1] (1.137 68 eV principal no-phonon line) created in phosphorus-doped silicon grown in a hydrogen atmosphere as a result of irradiation by thermal neutrons were investigated in magnetic fields up to 12 T and under uniaxial stress. The [ital C][sub 3[ital V]] symmetry of these defects was determined unambiguously from the dependences of the Zeeman splitting and the intensities of spectral components on magnetic-field orientation. The ground state of the bound exciton is split into a doublet with approximately 30 [mu]eV energy separation. This splitting, which is not evident in the zero-field spectra because of the selection rules, results in the appearance of an additional spectral component in a magnetic field. Using group theoretical methods we constructed a Hamiltonian for excitons bound to the [ital B][sub 71][sup 1] isoelectronic center, which takes into account electron-hole coupling and interaction with external perturbations. The phenomenological parameters of this Hamiltonian were determined from the optimal fit between theoretical and experimental dependences of the PL peak positions and their amplitudes on magnetic field and uniaxial stress. The proposed model of these bound excitons explains all of our experimental observations.

• OSTI ID: 6733339
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 50:11; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHOTOLUMINESCENCE
RADIATION EFFECTS
CRYSTAL DOPING
ELECTRON-HOLE COUPLING
EXCITED STATES
EXCITONS
GROUND STATES
IRRADIATION
PHOSPHORUS ADDITIONS
RECOMBINATION
STRESSES
TENSILE PROPERTIES
THERMAL NEUTRONS
ZEEMAN EFFECT
ALLOYS
BARYONS
COUPLING
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
FERMIONS
HADRONS
LUMINESCENCE
MECHANICAL PROPERTIES
NEUTRONS
NUCLEONS
QUASI PARTICLES
SEMIMETALS
360605* - Materials- Radiation Effects