Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects {ital B}{sub 80}(1.1470 eV) and {ital B}{sub 19}{sup 1}(1.1431 eV) in silicon
- Institute of Radioengineering and Electronics, Russian Academy of Sciences, 11 Mohovaya Street, Moscow, 103907 (Russian Federation)
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, V5A1S6 (Canada)
Photoluminescence spectra of excitons bound to isoelectronic defects {ital B}{sub 80} and {ital B}{sub 19}{sup 1} (1.147 00- and 1.143 14-eV principal no-phonon lines, respectively), created in phosphorus-doped silicon grown in a hydrogen atmosphere as the result of irradiation by thermal neutrons, were investigated in magnetic fields up to 12 T and under uniaxial stress in {l_angle}001{r_angle}, {l_angle}111{r_angle}, and {l_angle}110{r_angle} crystallographic directions using high-resolution Fourier-transform spectroscopy. The symmetry of these defects was determined to be {ital C}{sub 1}. The ground state of the bound excitons is split into a triplet. The lowest state, which is not evident in the zero-field spectra, results in an additional spectral component under applied magnetic field. Using group theory, we constructed a Hamiltonian for excitons bound to the isoelectronic centers {ital B}{sub 80} and {ital B}{sub 19}{sup 1}, which takes into account electron-hole coupling and interactions with external perturbations. {ital g}-factors {ital g}{sub 1/2}{sup {ital x}}=1.3, {ital g}{sub 1/2}{sup {ital y}}=1.2, {ital g}{sub 1/2}{sup {ital z}}=0.6, {ital g}{sub 3/2}{sup {ital x}}=0.9, {ital g}{sub 3/2}{sup {ital y}}=1.2, {ital g}{sub 3/2}{sup {ital z}}=1.7 for {ital B}{sub 80} and {ital g}{sub 1/2}{sup {ital x}}=1.35, {ital g}{sub 1/2}{sup {ital y}}=1.6, {ital g}{sub 1/2}{sup {ital z}}=0.7, {ital g}{sub 3/2}{sup {ital x}}=0.9, {ital g}{sub 3/2}{sup {ital y}}=0.7, {ital g}{sub 3/2}{sup {ital z}}=1.56 for {ital B}{sub 19}{sup 1} were determined from the best fit to the experiment.
- OSTI ID:
- 165011
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 51, Issue 8; Other Information: PBD: 15 Feb 1995
- Country of Publication:
- United States
- Language:
- English
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