Low-temperature chemical vapor deposition of high-purity copper from an organometallic source
Journal Article
·
· Chemistry of Materials; (USA)
- IBM Research Div., Yorktown Heights, NY (USA)
Thermal chemical vapor deposition (CVD) of copper has been reported from several inorganic sources including copper(II) chloride, copper(II) bis(acetylacetonate), copper(II) bis(hexafluoroacetylacetonate), and copper(I) tert-butoxide. The authors wish to report the deposition of analytically pure copper films by CVD employing organometallic (trialkylphosphine)cyclopentadienylcopper(I) complexes as copper precursors.
- OSTI ID:
- 6730434
- Journal Information:
- Chemistry of Materials; (USA), Vol. 2:3; ISSN 0897-4756
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
COPPER
CHEMICAL VAPOR DEPOSITION
THIN FILMS
DATA ANALYSIS
MEASURING INSTRUMENTS
MEASURING METHODS
ORGANOMETALLIC COMPOUNDS
CHEMICAL COATING
DEPOSITION
ELEMENTS
FILMS
METALS
ORGANIC COMPOUNDS
SURFACE COATING
TRANSITION ELEMENTS
400201* - Chemical & Physicochemical Properties
360601 - Other Materials- Preparation & Manufacture
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
COPPER
CHEMICAL VAPOR DEPOSITION
THIN FILMS
DATA ANALYSIS
MEASURING INSTRUMENTS
MEASURING METHODS
ORGANOMETALLIC COMPOUNDS
CHEMICAL COATING
DEPOSITION
ELEMENTS
FILMS
METALS
ORGANIC COMPOUNDS
SURFACE COATING
TRANSITION ELEMENTS
400201* - Chemical & Physicochemical Properties
360601 - Other Materials- Preparation & Manufacture