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U.S. Department of Energy
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Method for fabricating silicon cells

Patent ·
OSTI ID:672668

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Sponsoring Organization:
USDOE, Washington, DC (United States)
Assignee:
Sandia Corp., Albuquerque, NM (United States)
Patent Number(s):
US 5,792,280/A/
Application Number:
PAN: 8-820,969
OSTI ID:
672668
Country of Publication:
United States
Language:
English

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