Method for processing silicon solar cells

Tsuo, Y Simon; Landry, Marc D; Pitts, John R

Method for processing silicon solar cells

Patent · Tue Dec 31 23:00:00 EST 1996

OSTI ID:870942

Tsuo, Y Simon ^[1]; Landry, Marc D ^[2]; Pitts, John R ^[3]

Golden, CO
Lafayette, CO
Lakewood, CO

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

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Research Organization:: Midwest Research Institute

DOE Contract Number:: AC36-83CH10093

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Number(s):: US 5627081

OSTI ID:: 870942

Country of Publication:: United States

Language:: English

References (15)

Sub-5 μm thin film c-Si solar cell and optical confinement by diffuse reflective-substrate Shimokawa, Ryuichi; Ishii, Kenihi; Nishikawa, Hideshi Solar Energy Materials and Solar Cells, Vol. 34, Issue 1-4 https://doi.org/10.1016/0927-0248(94)90051-5	journal	September 1994
Complete microcrystalline p ‐ i ‐ n solar cell—Crystalline or amorphous cell behavior? Meier, J.; Flückiger, R.; Keppner, H. Applied Physics Letters, Vol. 65, Issue 7 https://doi.org/10.1063/1.112183	journal	August 1994
Ion irradiation enhanced crystal nucleation in amorphous Si thin films Im, J. S.; Atwater, Harry A. Applied Physics Letters, Vol. 57, Issue 17 https://doi.org/10.1063/1.104061	journal	October 1990
Effect of substrate temperature on recrystallization of plasma chemical vapor deposition amorphous silicon films Nakazawa, Kenji; Tanaka, Keiji Journal of Applied Physics, Vol. 68, Issue 3 https://doi.org/10.1063/1.346740	journal	August 1990
High-efficient operation of large-area (100 cm2) thin film polycrystalline silicon solar cell based on SOI structure Arimoto, S.; Morikawa, H.; Deguchi, M. Solar Energy Materials and Solar Cells, Vol. 34, Issue 1-4 https://doi.org/10.1016/0927-0248(94)90048-5	journal	September 1994
Solar cell structures combining amorphous, microcrystalline, and single-crystalline silicon Tsuo, Y. S.; Wu, X.; Alleman, J. L. Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) https://doi.org/10.1109/PVSC.1993.347170	conference	January 1993
The physics of amorphous-silicon thin-film transistors Powell, M. J. IEEE Transactions on Electron Devices, Vol. 36, Issue 12, p. 2753-2763 https://doi.org/10.1109/16.40933	journal	December 1989
Deposition of Diamond-Like Carbon Films and Other Materials Processes Using a Solar Furnace No authors listed Materials Technology, Vol. 8, Issue 11-12, p. 237-240 https://doi.org/10.1080/10667857.1993.11784990	journal	November 1993
Investigation of the effects of aluminum treatment on silicon solar cells Rohatgi, A.; Sana, P.; Ramanachalam, M. S. Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) https://doi.org/10.1109/PVSC.1993.347080	conference	January 1993
Recent results on hydrogen passivation of silicon sheet solar cells Tsuo, Y. Simon; Milstein, Joseph B. Journal of Applied Physics, Vol. 57, Issue 12 https://doi.org/10.1063/1.334830	journal	June 1985
Towards high-eficiency silicon solar cells by rapid thermal processing Hartiti, B.; Schindler, R.; Slaoui, A. Progress in Photovoltaics: Research and Applications, Vol. 2, Issue 2 https://doi.org/10.1002/pip.4670020208	journal	April 1994
Polycrystalline Si thin-film solar cell prepared by solid phase crystallization (SPC) method Matsuyama, Takao; Baba, Toshiaki; Takahama, Tsuyoshi Solar Energy Materials and Solar Cells, Vol. 34, Issue 1-4 https://doi.org/10.1016/0927-0248(94)90052-3	journal	September 1994
Laser-recrystallized silicon thin-film transistors on expansion-matched 800°C glass Troxell, J. R.; Harrington, M. I.; Miller, R. A. IEEE Electron Device Letters, Vol. 8, Issue 12 https://doi.org/10.1109/EDL.1987.26733	journal	December 1987
High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film Sera, K.; Okumura, F.; Uchida, H. IEEE Transactions on Electron Devices, Vol. 36, Issue 12 https://doi.org/10.1109/16.40970	journal	January 1989
Low temperature crystallization of amorphous silicon using an excimer laser Bachrach, R. Z.; Winer, K.; Boyce, J. B. Journal of Electronic Materials, Vol. 19, Issue 3 https://doi.org/10.1007/BF02733813	journal	March 1990

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Method for processing silicon solar cells

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