A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

Conference · Sat Aug 01 04:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6723091

Binkley, D M; Paulus, M J; Casey, M E ^[1]; Rochelle, J M ^[2]

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1. CTI PET Systems, Inc., Knoxville, TN (United States)
2. Tennessee Univ., Knoxville, TN (United States). Dept. of Electrical and Computer Engineering

In this paper, a low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2[mu] CMOS technology, features a transimpedance gain of 45 k[Omega], a risetime of 22 ns, a series noise of 1.6nV/Hz[sup 1/2], and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured [sup 22]Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 BGO/APD detector module coupled to the preamplifier is comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 1--k[Omega] to 50-k[Omega] range.

• OSTI ID: 6723091
• Report Number(s): CONF-911106--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 39:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FABRICATION
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PREAMPLIFIERS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
TRANSISTORS