Low-cost silicon substrates by directional solidification. Third quarterly report, September 1-November 30, 1980

Technical Report · Mon Dec 01 04:00:00 EST 1980

DOI:https://doi.org/10.2172/6721626· OSTI ID:6721626

Schmid, F.; Khattak, C. P.; Basaran, M.

Plane front solidification and refining of metallurgical grade silicon (Mg-Si) by the Heat Exchanger Method (HEM) were examined experimentally and theoretically. Better crystallinity was obtained from the Mg-Si if melt turbulence occurs during solidification. This was also verified by theoretical analyses. Experimental measurements indicate that vacuum purification of Mg-Si can be improved by increasing the holding time under vacuum, by using silica powder and/or increasing its amount. It has been shown that simple directional solidification by HEM of commercially available Mg-Si can produce material for 7.2% conversion efficiency solar cells.

• Research Organization: Crystal Systems, Inc., Salem, MA (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6721626
• Report Number(s): SERI/PR-9171-1-T1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
HEAT EXCHANGER METHOD
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PURIFICATION
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLIDIFICATION
SUBSTRATES