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Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays

Patent ·
OSTI ID:6721388
A diffraction-coupled semiconductor laser array is described capable of being switched between essentially in-phase and essentially out-of-phase supermodes of operation. The array consists of: a waveguide section having an array of semiconductor lasers coupled together by evanescent coupling, and having one at least partially reflective optical emission element; a diffraction section connected to the waveguide section, and having an at least partially reflective optical emission element that cooperates with the optical emission element in the waveguide section, to produce lasing of the array; wherein the dimensions of the waveguide section and the diffraction section are selected to encourage in-phase lasing of the array; and wherein the diffraction section and the waveguide section have electrically isolated contact layers to switch the array, by independent current injection, between two different operating states, one of which promotes lasing in the in-phase supermode and the other of which promotes lasing in the out-of-phase supermode.
Assignee:
TRW Inc., Redondo Beach, CA
Patent Number(s):
US 4764935
OSTI ID:
6721388
Country of Publication:
United States
Language:
English