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Dielectric properties of rf-sputtered Y sub 2 O sub 3 thin films

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.346804· OSTI ID:6720449
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  1. Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi, Ibaraki 319-12 (Japan)
Yttrium oxide (Y{sub 2}O{sub 3}) thin films were deposited on indium-tin-oxide(ITO)-coated glass substrates by the radio-frequency-sputtering method using an Y{sub 2}O{sub 3}-sintered target. The relative dielectric constant {epsilon}{sub r} and the dielectric strength {ital E}{sub {ital BD}} of the Y{sub 2}O{sub 3} films were studied. It was found that {epsilon}{sub {ital r}} and E{sub {ital BD}} have a maximum value and a minimum value, respectively, at 1.3 Pa when the pressure of the sputtering gas, Ar+10% O{sub 2}, is varied from 0.67 to 9.3 Pa. The x-ray diffraction study showed that the Y{sub 2}O{sub 3} films deposited at 1.3 Pa are predominantly oriented along the {l angle}332{r angle} direction and their grain size is the smallest. Ion mass analysis showed impurity diffusion from ITO in the films deposited at 1.3 Pa. Furthermore, the dielectric properties of the Y{sub 2}O{sub 3} films deposited at 1.3 Pa are related to the structural properties, such as the {l angle}332{r angle} orientation, grain size, and impurity diffusion.
OSTI ID:
6720449
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 68:2; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English