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Electrical characterization of chemically modified YBa sub 2 Cu sub 3 O sub 7 minus x surfaces

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103268· OSTI ID:6720340
; ;  [1]
  1. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (USA)
Results on electrical characterization of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin-film surfaces treated with a Br/ethanol chemical etch are presented. Electrical measurements of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}}/Au/Nb device structures fabricated using polycrystalline, post-annealed YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} films with Br-etched surfaces, show improvements of approximately one or two orders of magnitude in current densities and resistivities (resistance-area products) relative to unetched devices. The existence of supercurrents in these structures has been confirmed by observation of the ac Josephson effect, and by magnetic field and temperature studies of the critical currents. The Br-etch process has produced 10{times}10 {mu}m{sup 2} devices with critical current densities greater than 400 A/cm{sup 2} and resistivities as low as 4{times}10{sup {minus}7} {Omega} cm{sup 2}.
OSTI ID:
6720340
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:26; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English