Formation of low dislocation density silicon-on-insulator by a single implantation and annealing

Journal Article · Mon Jul 09 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104213· OSTI ID:6718787

EL-Ghor, M K; Pennycook, S J ^[1]; Namavar, F; Karam, N H ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6024 (USA)
2. Spire Corporation, Bedford, Massachusetts 01730 (USA)

High quality silicon-on-insulator structures have been formed with dislocation densities in the top silicon layer below 10{sup 4} cm{sup {minus}2} by oxygen implantation and one-step annealing at 1300 {degree}C for 6 h. Careful control of the implantation conditions is required in order to produce a high density of cavities in the top silicon layer. These cavities provide a stress-free sink for silicon and oxygen interstitials, reducing the point-defect supersaturations and, therefore, the nucleation and growth of oxide precipitates and dislocation loops. They also provide an internal surface which blocks free propagation of dislocation loops to the surface avoiding the formation of threading dislocations. With continued annealing, both the cavities and the oxide precipitates eventually dissolve, leaving a high quality silicon surface layer with a very low dislocation density.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6718787
• Journal Information: Applied Physics Letters; (USA), Vol. 57:2; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ION IMPLANTATION
ANNEALING
DISLOCATIONS
ORNL
SEMICONDUCTOR MATERIALS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
LINE DEFECTS
MATERIALS
NATIONAL ORGANIZATIONS
SEMIMETALS
US AEC
US DOE
US ERDA
US ORGANIZATIONS
360603* - Materials- Properties
360601 - Other Materials- Preparation & Manufacture