Study of the effect of ion implantation on the electrical and microstructural properties of tin-doped indium oxide thin films

Journal Article · Thu Apr 15 00:00:00 EDT 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.352887· OSTI ID:6717270

Shigesato, Y; Paine, D C ^[1]; Haynes, T E ^[2]

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1. Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Ion implantation of H[sub 2][sup +] or O[sup +] ions in the range 0--1.7[times]10[sup 15] and 0--1.3[times]10[sup 15]/cm[sup 2], respectively, was used to investigate the effect of implant-induced damage on the electrical properties of Sn-doped In[sub 2]O[sub 3] (ITO) films deposited by electron-beam evaporation on SiO[sub 2]-coated soda-lime glass substrates. The films were characterized as a function of implant dose using low-temperature Hall effect, resistivity, optical transmissivity, x-ray diffraction, and transmission electron microscopy (TEM). A systematic decrease in both carrier density ([ital n]) and Hall mobility ([mu]) was observed with increasing dose of either implant species. The electronic results were analyzed using charged and neutral impurity scattering models which suggest that the observed changes are due to the degradation of electrically active donor centers and the generation of the neutral scattering centers. The microstructure of the implanted films, as revealed by TEM and x-ray diffraction, is consistent with the presence of significant dynamic recovery during implantation.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6717270
• Journal Information: Journal of Applied Physics; (United States), Vol. 73:8; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM OXIDES
ION IMPLANTATION
CARRIER MOBILITY
ELECTRIC CONDUCTIVITY
HYDROGEN IONS
MICROSTRUCTURE
OXYGEN IONS
THIN FILMS
TIN ADDITIONS
TRANSMISSION ELECTRON MICROSCOPY
ALLOYS
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
FILMS
INDIUM COMPOUNDS
IONS
MICROSCOPY
MOBILITY
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
TIN ALLOYS
360602* - Other Materials- Structure & Phase Studies