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Title: Electronic-structure calculation of the hole-carrier-density distribution in Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] superconductors

Journal Article · · Physical Review, B: Condensed Matter; (United States)
 [1];  [2]
  1. Section de Recherches de Metallurgie Physique, Centre d'Etudes Nucleaires de Saclay, 91191 Gif-sur-Yvette Cedex (France)
  2. Institut des Sciences des Materiaux, Universite de Paris-Sud, Batiment 415, 91405 Orsay (France)

Results of electronic structure calculations for the hole density in the two-dimensional CuO[sub 2] planes are presented in this paper for the three bismuth cuprate superconductors Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10]. The hole density in these compounds arises due to electron transfer from the CuO[sub 2] planes to the Bi-O layers. Our calculations show that Bi[sub 2]Sr[sub 2]CuO[sub 6] is so highly overdoped that it is really a metal and at the limit of superconductivity. Also Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8] has a hole density which is higher than is required for a maximum value of [ital T][sub [ital c]]. On the other hand, the hole density in the three-layer compound Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] is nearly optimum, which indicates that apart from the number of layers, an optimum value of the hole density is important for maximizing [ital T][sub [ital c]]. The hole densities in the two types of CuO[sub 2] layers in this compound are nearly equal although the central layer has a slightly lower value. As the number of CuO[sub 2] planes increases in this family of superconductors the total amount of hole carrier density per chemical formula increases due to an enhanced electron transfer to the Bi-O layers. However, this increase is small so that the hole density per CuO[sub 2] drops rapidly as the number of CuO[sub 2] planes increases.

OSTI ID:
6716052
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 49:18; ISSN 0163-1829
Country of Publication:
United States
Language:
English