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Absorption of the moderate energy of an electron beam incident on silicon and gallium arsenide

Journal Article · · Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:6714116
;
Universal dependences, describing the spatial distribution of the absorbed energy in Si and GaAs were determined experimentally from the excitation of electron-hole pairs in Al-Si and Cu-GaAs Schottky diodes bombarded with electrons of E/sub 0/=2-20 keV initial energy.
Research Organization:
M. I. Kalinin Polytechnic Institute, Leningrad
OSTI ID:
6714116
Journal Information:
Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 12:3; ISSN SPSEA
Country of Publication:
United States
Language:
English

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Related Subjects

640304* -- Atomic
Molecular & Chemical Physics-- Collision Phenomena
74 ATOMIC AND MOLECULAR PHYSICS
ABSORPTION
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
DISTRIBUTION
ELECTRON COLLISIONS
ELEMENTS
ENERGY ABSORPTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SPATIAL DISTRIBUTION