Radiation effects on the electrical properties of MOS device materials. Final report 2 Mar 76--28 Feb 77

Technical Report · Wed Feb 01 00:00:00 EST 1978

OSTI ID:6706657

Hughes, G W

Radiation-hard SiO/sub 2/ on Si grown by three different processes (dry, pyrogenic steam, and hybrid) has been examined by vacuum ultraviolet techniques. Flatband shift vs time measurements provide estimates of capture cross sections and trap densities. Current-enhancement measurements provide qualitative information about trapping at both the Si-SiO/sub 2/ and gate-SiO/sub 2/ interface. Results show that unannealed dry oxides have the lowest interface-state density after irradiation, making them more desirable for applications where switching speed is important. Annealing in argon at 800 C increases both the hole-trap and interface-state density. All dry oxides have a dominant trap with capture cross section S approx. = 5 x 10/sup -14/ cm/sup 2/ at applied oxide fields E/sub 0/ = 1 MV/cm. Pyrogenic steam oxides have many more interface stfores after irradiation than dry oxides and can be characterized by a dominant trap with S approx. 5 x 10/sup -14/ to 10/sup -12/ cm/sup 2/ for E/sub 0/ = 1 MV/cm. Hybrid oxides grown in 3% HCl steam followed by dry O/sub 2/ show S approx. 2 x 10/sup -13/ cm at E/sub 0/ = 1 MV/cm. The larger capture cross section for these oxides is believed to be due to the presence of HCl. All oxides show a neutral trap capture cross section which is approximately inversely proportional to applied oxide field. Both pyrogenic steam and dry hard oxides can be characterized by the same trap. The difference between the two oxides appears to be only the density of interface states.

• Research Organization: RCA Labs., Princeton, NJ (USA)
• DOE Contract Number: DAAG39-76-C-0088; DNA-MIPR-76-654
• OSTI ID: 6706657
• Report Number(s): AD-A-050785; PRRL-77-CR-37
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
PHYSICAL RADIATION EFFECTS
ANNEALING
CROSS SECTIONS
ELECTRIC FIELDS
HYDROCHLORIC ACID
INTERFACES
SILICON
TRAPPING
CHALCOGENIDES
ELEMENTS
HEAT TREATMENTS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMIMETALS
SILICON COMPOUNDS
360605* - Materials- Radiation Effects