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Title: Characteristics of n{sup +} polycrystalline-Si/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash} semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor

Abstract

We report interface and dielectric reliability characteristics of n{sup +} polycrystalline-silicon (poly-Si)/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash}semiconductor (MOS) capacitors. Al{sub 2}O{sub 3} films were prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor. Interface state density (D{sub it}) and dielectric reliability properties of n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS structures were examined by capacitance{endash}voltage, conductance, current{endash}voltage, and time-dependent dielectric breakdown measurements. The D{sub it} of the n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS system near the Si midgap is approximately 8{times}10{sup 10}eV{sup {minus}1}cm{sup {minus}2} as determined by the conductance method. Frequency dispersion as small as {similar_to}20 mV and hysteresis of {similar_to}15 mV were attained under the electric field of {+-}8 MV/cm. The gate leakage current of {similar_to}36 Aa effective thickness Al{sub 2}O{sub 3} dielectric measured at the gate voltage of {minus}2.5 V is {similar_to}{minus}5 nA/cm2, which is approximately three orders of magnitude lower than that of a controlled oxide (SiO{sub 2}). Time-dependent dielectric breakdown data of Al{sub 2}O{sub 3}/Si MOS capacitors under the constant current/voltage stress reveal excellent charge-to-breakdown characteristics over controlled oxide. Reliable gate oxide integrity of Al{sub 2}O{sub 3} gate dielectric is manifested by the excellent distribution of gate oxide breakdown voltage on 128 millionmore » MOS capacitors having isolation edges. Extracted time constant and capture cross section of the Al{sub 2}O{sub 3}/Si junction are discussed. {copyright} 2001 American Institute of Physics.« less

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40203754
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 89; Journal Issue: 11; Other Information: DOI: 10.1063/1.1368869; Othernumber: JAPIAU000089000011006275000001; 071111JAP; PBD: 1 Jun 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BREAKDOWN; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CROSS SECTIONS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; LEAKAGE CURRENT; OXIDES

Citation Formats

Park, Dae-Gyu, Cho, Heung-Jae, Lim, Kwan-Yong, Lim, Chan, Yeo, In-Seok, Roh, Jae-Sung, and Park, Jin Won. Characteristics of n{sup +} polycrystalline-Si/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash} semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor. United States: N. p., 2001. Web. doi:10.1063/1.1368869.
Park, Dae-Gyu, Cho, Heung-Jae, Lim, Kwan-Yong, Lim, Chan, Yeo, In-Seok, Roh, Jae-Sung, & Park, Jin Won. Characteristics of n{sup +} polycrystalline-Si/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash} semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor. United States. doi:10.1063/1.1368869.
Park, Dae-Gyu, Cho, Heung-Jae, Lim, Kwan-Yong, Lim, Chan, Yeo, In-Seok, Roh, Jae-Sung, and Park, Jin Won. Fri . "Characteristics of n{sup +} polycrystalline-Si/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash} semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor". United States. doi:10.1063/1.1368869.
@article{osti_40203754,
title = {Characteristics of n{sup +} polycrystalline-Si/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash} semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor},
author = {Park, Dae-Gyu and Cho, Heung-Jae and Lim, Kwan-Yong and Lim, Chan and Yeo, In-Seok and Roh, Jae-Sung and Park, Jin Won},
abstractNote = {We report interface and dielectric reliability characteristics of n{sup +} polycrystalline-silicon (poly-Si)/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash}semiconductor (MOS) capacitors. Al{sub 2}O{sub 3} films were prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor. Interface state density (D{sub it}) and dielectric reliability properties of n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS structures were examined by capacitance{endash}voltage, conductance, current{endash}voltage, and time-dependent dielectric breakdown measurements. The D{sub it} of the n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS system near the Si midgap is approximately 8{times}10{sup 10}eV{sup {minus}1}cm{sup {minus}2} as determined by the conductance method. Frequency dispersion as small as {similar_to}20 mV and hysteresis of {similar_to}15 mV were attained under the electric field of {+-}8 MV/cm. The gate leakage current of {similar_to}36 Aa effective thickness Al{sub 2}O{sub 3} dielectric measured at the gate voltage of {minus}2.5 V is {similar_to}{minus}5 nA/cm2, which is approximately three orders of magnitude lower than that of a controlled oxide (SiO{sub 2}). Time-dependent dielectric breakdown data of Al{sub 2}O{sub 3}/Si MOS capacitors under the constant current/voltage stress reveal excellent charge-to-breakdown characteristics over controlled oxide. Reliable gate oxide integrity of Al{sub 2}O{sub 3} gate dielectric is manifested by the excellent distribution of gate oxide breakdown voltage on 128 million MOS capacitors having isolation edges. Extracted time constant and capture cross section of the Al{sub 2}O{sub 3}/Si junction are discussed. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1368869},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 89,
place = {United States},
year = {2001},
month = {6}
}