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Development of bulk GaAs room temperature radiation detectors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6703430
;  [1];  [2];  [3]
  1. Michigan Univ., Ann Arbor, MI (United States). Dept. of Nuclear Engineering
  2. Israel Atomic Energy Commission, Yavne (Israel). Soreq Nuclear Research Center
  3. Los Alamos National Lab., NM (United States)
This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.
OSTI ID:
6703430
Report Number(s):
CONF-911106--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 39:5
Country of Publication:
United States
Language:
English

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