Enhanced adhesion buffer layer for deep x-ray lithography using hard x rays
- Advanced Photon Source APS-XFD, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
The first step in the fabrication of microstructures using deep x-ray lithography (DXRL) is the irradiation of an x-ray sensitive resist like polymethylmethacrylate (PMMA) by hard x rays. At the Advanced Photon Source, a dedicated beamline allows the proper exposure of very thick (several mm) resists. To fabricate electroformed metal microstructures with heights of several mm, a PMMA sheet is glued onto a metallic plating base. An important requirement is that the PMMA layer must adhere well to the plating base. The adhesion is greatly reduced by the penetration of even a small fraction of hard x rays through the mask absorber into the substrate. In this work we will show a novel technique to improve the adhesion of PMMA onto high-{ital Z} substrates for DXRL. Results of the improved adhesion are shown for different exposure/substrate conditions. {copyright} {ital 1998 American Vacuum Society.}
- OSTI ID:
- 670208
- Report Number(s):
- CONF-9805132--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 16; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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