Diffuse diffracted features and ordered domain structures in GaInP layers grown by organometallic vapor phase epitaxy
- Kwangju Inst. of Science and Technology (Korea, Republic of). Dept. of Materials Science and Engineering
- Univ. of Utah, Salt Lake City, UT (United States). Dept. of Materials Science and Engineering
Transmission electron diffraction (TED) and transmission electron microscope (TEM) studies have been made of organometallic vapor phase epitaxial Ga{sub x}In{sub 1{minus}x}P layers (x {approx} 0.5) grown at temperatures in the range 570--690 C to investigate ordering and ordered domain structures. TED and TEM examination shows that the size and morphology of ordered domains depend on the growth temperature. The ordered domains change from a fine rod-like shape to a plate-like shape as the growth temperature increases. The domains are of width 0.6--2 nm and of length 1{approximately}10 nm. Characteristic diffuse features observed in TED patterns are found to depend on the growth temperature. Extensive computer simulations show a direct correlation between the ordered domain structures and such diffuse features. A possible model is suggested to describe the temperature dependence of the ordered domain structure.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- OSTI ID:
- 669809
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 10 Vol. 27; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy
III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.