Influence of annealing on the surface-acoustic-wave velocity increase induced by ion implantation in quartz

Journal Article · Sun Oct 01 00:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324403· OSTI ID:6685296

Hartemann, P

A surface-acoustic-wave velocity increase is induced by implantation of helium ions at 100 keV in Y- and ST-cut quartz substrates. An important decrease of this velocity variation has been found after an annealing at about 560 /sup 0/C, and it depends on the annealing time. After annealing, the features of the quartz layer perturbed by implantation of 1.3 x 10/sup 16/ /sup 4/He/sup +//cm/sup 2/ are close to those of vitreous silica at room temperature. Experimental and calculated results of the influence of an annealing on the surface wave velocity variation and the density of the perturbed layer are reported and discussed.

• Research Organization: Thomson-CSF-Laboratoire Central de Recherches, Domaine de Corbeville, 91401 Orsay, France
• OSTI ID: 6685296
• Journal Information: J. Appl. Phys.; (United States), Vol. 49:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
QUARTZ
PHYSICAL RADIATION EFFECTS
ANNEALING
HELIUM IONS
ION IMPLANTATION
KEV RANGE
SURFACES
ULTRASONIC WAVES
WAVE PROPAGATION
CHALCOGENIDES
ENERGY RANGE
HEAT TREATMENTS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SILICON COMPOUNDS
SILICON OXIDES
SOUND WAVES
360605* - Materials- Radiation Effects