Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Grain boundaries in silicon solar cells

Conference ·
OSTI ID:6676012
The correlations between the electrical and compositional properties of grain boundaries in polycrystalline Si are examined in detail. High-resolution surface analysis techniques (AES, SIMS, XPS, EELS) and microelectrical (SAM, EBIC, minority-carrier lifetime) characterization methods are used. The direct evidence for impurity segregation to the intergrain regions is presented. Effect of illumination on the grain boundary electrical characteristics are correlated with impurity compositions. Finally, the interrelationships among heat-treatment, oxygen segregation and grain boundary electrical activity are discussed.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6676012
Report Number(s):
SERI/TP-213-1761; CONF-820906-35; ON: DE83003493
Country of Publication:
United States
Language:
English