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Grain boundaries in silicon solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5320044
The correlations between the electrical and compositional properties of grain boundaries in polycrystalline Si are examined in detail. High-resolution surface analysis techniques (AES, SIMS, XPS, EELS) and microelectrical (SAM, EBIC, minority-carrier lifetime) characterization methods are used. The direct evidence for impurity segregation to the intergrain regions is presented. Effect of illumination on the grain boundary electrical characteristics are correlated with impurity compositions. Finally, the interrelationships among heat-treatment, oxygen segregation and grain boundary electrical activity are discussed.
Research Organization:
Solar Energy Research Institute, Golden, CO
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5320044
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English