Long-wavelength semiconductor laser
A semiconductor laser wherein a wide range of laser emission wavelengths can be obtained by varying the composition of monocrystalline alloys employed as semiconductor material. The semiconductor structure comprises on a monocrystalline indium phosphide substrate of a predetermined conductivity type successive epitaxial layers consisting of a first confinement layer of the same conductivity type, an active layer having the formula (Ga /SUB x/ Al/sub 1/- /SUB x/ ) /SUB 0.47/ In /SUB 0.53/ As where x is within the range of 0 to 0.27, and a second confinement layer of opposite conductivity type. The confinement layers are composed of either InP or a ternary alloy Al /SUB 0.47/ In /SUB 0.53/ As or a quaternary alloy Ga /SUB x/ , Al/sub 1/- /SUB x/ ,As /SUB y'/ Sb/sub 1/- /SUB y'/ where x' and y' are chosen so that the material should have a predetermined crystal lattice and an energy gap of greater width than the substrate material.
- Assignee:
- Thomas-CSF (France)
- Patent Number(s):
- US 4430740
- OSTI ID:
- 6672435
- Country of Publication:
- United States
- Language:
- English
Similar Records
Method of making a DH laser with strained layers by MBE
A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations
Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
DESIGN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER MATERIALS
LASERS
MATERIALS
MONOCRYSTALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
WAVELENGTHS